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dc.contributor.advisorHaji-Sheikh, Michael J.en_US
dc.contributor.authorJayabalakrishnan, Jananien_US
dc.date.accessioned2019-12-03T21:23:21Z
dc.date.available2019-12-03T21:23:21Z
dc.date.issued2017
dc.identifier.urihttps://commons.lib.niu.edu/handle/10843/21462
dc.descriptionAdvisors: Michael J. Haji-Sheikh.en_US
dc.descriptionCommittee members: Mansour Tahernezhadi; Donald S. Zinger.en_US
dc.descriptionIncludes illustrations.en_US
dc.descriptionIncludes bibliographical references.en_US
dc.description.abstractThe thesis work primarily focuses on fabrication and modelling of Schottky Diode formed using porous silicon. The wafer used for this is silicon coated with silicon nitride on both sides. A photoresist is deposited on the front side of the wafer using spin coating technique and silicon nitride that is coated on the back side is etched off using dry chemical etching process. A photomask is designed using AutoCAD software which helps open windows on the front side of the wafer. Windows are opened on the front side using positive photoresist technique. This technique enables the portion of the wafer that is exposed to UV light more soluble in the developer solution making the unexposed portion opaque or insoluble. Silicon nitride is etched off on the front side where the windows are opened using similar dry chemical etching process. After coating photoresist on the front side, silicon nitride on the backside is etched completely. Silicon nitride thickness before and after etching has been recorded. The wafer is then diced into smaller samples and allowed to grow pores. Electrochemical etching process with the electrolyte HF:Ethanol in the ratio of 1:3 is used for porous silicon formation. The samples are then coated with Chrome/Gold contact on front and backside and are examined under Scanning Electron Microscope (SEM). The device, when exposed to light, exhibits schottky diode characteristics. The forward and reverse diode characteristics have been tested.en_US
dc.format.extent48 pagesen_US
dc.language.isoengen_US
dc.publisherNorthern Illinois Universityen_US
dc.rightsNIU theses are protected by copyright. They may be viewed from Huskie Commons for any purpose, but reproduction or distribution in any format is prohibited without the written permission of the authors.en_US
dc.subject.lcshEngineeringen_US
dc.titleFabrication and modelling of porous silicon schottky diodeen_US
dc.type.genreDissertation/Thesisen_US
dc.typeTexten_US
dc.contributor.departmentDepartment of Electrical Engineeringen_US
dc.description.degreeM.S. (Master of Science)en_US


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