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dc.contributor.advisorHaji-Sheikh, Michael J.en_US
dc.contributor.authorAhmed, Sameeuddinen_US
dc.date.accessioned2018-10-03T14:21:12Z
dc.date.available2018-10-03T14:21:12Z
dc.date.issued2015
dc.identifier.urihttps://commons.lib.niu.edu/handle/10843/18689
dc.descriptionAdvisors: Michael J. Haji Sheikh.en_US
dc.descriptionCommittee members: Martin Kocanda; Donald S. Zinger.en_US
dc.description.abstractThe main objective of this thesis is to design a 100micromx520microm PIN and SDD photodiodes in 2D Luminous: optoelectronic device simulator and study their characteristics. Firstly, simulations are performed at room temperature with the monochromatic light of 1um and optical power densities of 1, 10, 100 microm/cm2. It was found that the photocurrent increases with the intensity of light. SDD diode has sideward electric field that causes increase in the photo-generation current. The simulation results show that the SNR of SDD is 1.6 times greater than that of PIN diode and the responsivity (A/W) of SDD is 1.6-1.75 times greater than that of PIN diode at different optical intensities of light (W/cm2). Secondly, simulations are performed at various temperatures like 15, 25 and 50 °C on the same design. This showed that with the increase of temperature the leakage current increases. It is found that when the sideward electrode of SDD diode is biased at -50V, then it has a higher breakdown voltage of 550V than PIN diode that has a breakdown of 90V. And, it is also observed that the power dissipation (W) in SDD is 1.4- 1.6 times more than that of PIN photodiode. The simulation results are confirmed with the practical values of the PIN photodetector fabricated in the clean room by Dr. Haji-Sheikh, Dr. Ross and Dr. Gregg, professors of Northern Illinois University.en_US
dc.format.extent100 pagesen_US
dc.language.isoengen_US
dc.publisherNorthern Illinois Universityen_US
dc.rightsNIU theses are protected by copyright. They may be viewed from Huskie Commons for any purpose, but reproduction or distribution in any format is prohibited without the written permission of the authors.en_US
dc.subject.lcshElectrical engineeringen_US
dc.subject.lcshPIN diodes--Simulation methodsen_US
dc.subject.lcshSilicon diodes--Simulation methodsen_US
dc.subject.lcshPhotodiodes--Simulation methodsen_US
dc.subject.lcshOptoelectronic devicesen_US
dc.titleEffect of light and temperature on the characteristics of PIN and SDD diode and their comparison using ATLAS/ Silvacoen_US
dc.type.genreDissertation/Thesisen_US
dc.typeTexten_US
dc.contributor.departmentDepartment of Electrical Engineeringen_US
dc.description.degreeM.S. (Master of Science)en_US


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