Study of zinc oxide nanowires on gold-deposited porous silicon samples
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The main aim of this work is to grow zinc oxide (ZnO) nanowires on porous silicon samples. Initially a porous layer was formed using a mixture of hydrofluoric acid (HF) with ethanol and acetonitrile in the ratio of 1:3. HF-Ethanol and HF-Acetonitrile solutions were used as electrolytes in the electrochemical etching process. Here the electrolyte concentration is constant, and the etching time and current density are changed. Later the results are compared for the samples that are formed by using the two solutions. The samples formed by HF:Acetonitrile gave a smoother and more uniform porous silicon layer than did the HF: Ethanol solution.;These porous silicon samples are used as a starting point for growing zinc oxide nanowires. A thin layer of gold (1nm and 3nm) is deposited on the porous silicon layer, and zinc oxide nanowires are grown using the chemical vapor transport method in the Lindberg furnace. In the growth process the source is a mixture of graphite and zinc oxide powder, and the growth is done in a constant flow of argon gas. The growth was done for different lengths of time. At greater growth times, i.e. at about 6 hours we were able to grow nanowires on the porous silicon samples. After growth these samples are characterized using various techniques such as Scanning Electron Microscopy (SEM), UV-Vis spectroscopy, and X-Ray diffraction.