Utilization of the Hall effect in the study of electrical transport processes
Volin, Kenneth J.
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Hall effect measurements have been made on single crystals of As₂Se₃ yielding electron mobilities of ~100 cm²/V-sec in the temperature range 300°K to 400°K. Comparison of results to published data on amorphous As₂Se₃ shows that the short range order of the amorphous state does not carry into the crystalline state as it has been previously stated for As₂Se₃. Measurement of the Hall effect in ion-beam sputtered ITO thin films has been made to investigate the conductivity dependence on the angle of the incident beam. Measurements of conductivity, carrier concentration, and mobility were made over the temperature range 300- 400°K for various angles of incidence. The results, although not conclusive, do suggest the possibility of the formation of islands of SnO₂ in the films, accounting for a carrier concentration dependence on the angle of incidence.