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One-directional normally-on vertical silicon carbide (3C-SiC) MESFET on silicon (Si) substrate

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dc.contributor.advisor Abdel-Motaleb, Ibrahim Mohamed, 1954- en_US
dc.contributor.author Thakkallapally, Ramana en_US
dc.date.accessioned 2017-08-02T21:16:18Z
dc.date.available 2017-08-02T21:16:18Z
dc.date.issued 2014
dc.identifier.uri http://commons.lib.niu.edu/handle/10843/17762
dc.description Advisors: Ibrahim Abdel-Motaleb. en_US
dc.description Committee members: Veysel Demir; Donald Zinger. en_US
dc.description.abstract The main objective of this thesis is to design a one-directional normally-on vertical 3C-SiC MESFET on silicon substrate. The 3C-SiC material has higher carrier mobility, high saturation velocity and high critical breakdown field compared to traditional silicon devices. Epitaxial layer of 3C-SiC can be easily grown on the large area of silicon wafer. Vertical MESFET occupies less than 33% of the area compared to lateral MESFET with same dimensions, and this increases the integration density and reduces the cost. The drain current of vertical 3C-SiC MESFET is 100% higher than lateral structure MESFET with same dimensions. Vertical 3C-SiC MESFETs can be easily connected in parallel in order to get higher currents and can be easily cooled, since the junctions are exposed. en_US
dc.description.abstract This work involves the study of electrical and thermal characteristics of the device. Electrical characteristics of the device are investigated using Silvaco Atlas software. Thermal nature of the device is studied using COMSOL Multiphysics. Numerical calculations were done in MATHCAD. The device breakdown voltage was simulated at gate voltage of 0V and found to be more than 600V. The drain current reached 600mA/mm, with a critical breakdown electric field of 3.9x106 V/cm. en_US
dc.format.extent 96 pages en_US
dc.language.iso eng en_US
dc.publisher Northern Illinois University en_US
dc.rights NIU theses are protected by copyright. They may be viewed from Huskie Commons for any purpose, but reproduction or distribution in any format is prohibited without the written permission of the authors. en_US
dc.subject.lcsh Gallium arsenide semiconductors en_US
dc.subject.lcsh Metal semiconductor field-effect transistors en_US
dc.subject.lcsh Electric apparatus and appliances en_US
dc.subject.lcsh Electrical engineering en_US
dc.title One-directional normally-on vertical silicon carbide (3C-SiC) MESFET on silicon (Si) substrate en_US
dc.type Text en_US
dc.contributor.department Department of Electrical Engineering en_US
dc.description.degree M.S. (Master of Science) en_US


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